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Updated: Jun 30, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Current fluctuations in a partially asymmetric simple exclusion process with a defect particle
Ivan Lobaskin1, Martin R Evans1, Kirone Mallick2
1School of Physics and Astronomy, University of Edinburgh, Peter Guthrie Tait Road, Edinburgh EH9 3FD, United Kingdom.
Abstract:
We study an exclusion process on a ring comprising a free defect particle in a bath of normal particles. The model is one of the few integrable cases in which the bath particles are partially asymmetric. The presence of the free defect creates localized or shock phases according to parameter values. We use a functional approach to Bethe equations resulting from a nested Bethe ansatz to calculate exactly the mean currents and diffusion constants. The results agree very well with Monte Carlo simulations and reveal the main modes of fluctuation in the different phases of the steady state.
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