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Published on: April 4, 2017
Efficient photo-induced second harmonic generation in silicon nitride photonics
Xiyuan Lu1,2, Gregory Moille1,3, Ashutosh Rao1,4
1Microsystems and Nanotechnology Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Researchers achieved record-high second harmonic generation (SHG) efficiency in silicon photonics. This breakthrough enables efficient nonlinear optical processes, paving the way for advanced photonic devices and optical frequency references.
Area of Science:
- Photonics
- Nonlinear Optics
- Materials Science
Background:
- Silicon photonics typically lacks second-order nonlinear optical (χ(2)) response due to the centrosymmetric nature of constituent materials.
- This lack of inversion symmetry prohibits nonlinear processes like second harmonic generation (SHG).
Purpose of the Study:
- To achieve record-high SHG efficiency in silicon photonics.
- To overcome the inherent limitations of centrosymmetric silicon for nonlinear optical applications.
Main Methods:
- Employing a photo-induced effective nonlinear (χ(2)) susceptibility.
- Utilizing resonant enhancement and perfect phase-matching techniques.
- Fabricating silicon photonic devices capable of efficient SHG.
Main Results:
- Demonstrated a record conversion efficiency of (2,500 ± 100) %/W for SHG.
- Achieved milliwatt-level SHG output powers with up to (22 ± 1)% power conversion efficiency.
- Exceeded previous field-induced SHG efficiencies by 2 to 4 orders of magnitude.
Conclusions:
- This work represents a major breakthrough in realizing efficient nonlinear optical (χ(2)) processes in silicon photonics.
- The demonstrated high SHG efficiency paves the way for integrating self-referenced frequency combs and optical frequency references.
- Enables new possibilities for advanced functional photonic devices based on silicon.
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