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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Related Experiment Video

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Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure.

Jongseong Han1, Jaemin Son2, Seungho Ryu1

  • 1Department of Semiconductor Systems Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea.

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|March 19, 2024
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Summary
This summary is machine-generated.

This study showcases binary and ternary logic-in-memory operations using nanosheet feedback field-effect transistors (FBFETs). These FBFETs enable efficient logic circuits with data storage capabilities, paving the way for advanced computing.

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Area of Science:

  • Semiconductor Devices
  • Integrated Circuits
  • Non-Volatile Memory

Background:

  • Logic-in-memory (LIM) architectures integrate computation and data storage to overcome the von Neumann bottleneck.
  • Field-effect transistors (FETs) are fundamental building blocks for electronic circuits, but traditional designs face limitations in energy efficiency and speed for advanced applications.

Purpose of the Study:

  • To demonstrate binary and ternary logic operations within a single device architecture.
  • To investigate the potential of nanosheet (NS) feedback field-effect transistors (FBFETs) for logic-in-memory applications.
  • To analyze the switching characteristics and performance of triple-gated NS FBFETs.

Main Methods:

  • Fabrication of triple-gated nanosheet (NS) feedback field-effect transistors (FBFETs).
  • Reconfiguration of NS FBFETs into p-channel or n-channel modes via gate bias polarity.
  • Implementation of NS FBFETs into logic circuits for inverters, NAND, and NOR gates.

Main Results:

  • Demonstrated binary and ternary logic operations (inverters, NAND, NOR gates) using NS FBFETs.
  • Achieved steep switching characteristics with a subthreshold swing of 1.08 mV dec-1.
  • Exhibited a high ON/OFF current ratio of approximately 107 and output storage under zero-bias conditions.

Conclusions:

  • NS FBFETs with triple-gated structures are highly effective for implementing logic-in-memory operations.
  • The demonstrated steep switching and high ON/OFF ratio make NS FBFETs suitable for energy-efficient and high-performance computing.
  • These transistors show significant promise as key components for next-generation logic-in-memory systems.