Laser-induced transverse voltage effect inc-axis inclined La_xSr_1-xTiO₃thin films prepared by MOCVD

Light and thermal detectors based on the laser-induced transverse voltage (LITV) effect have garnered significant interest for their rapid and broad spectral response. In this study, we prepared the La-doped SrTiO₃(STO) epitaxial thin films on the 12° inclined single crystal LaAlO₃(LAO) (100) substrates using our home-designed metal-organic chemical vapor deposition system. Under the illumination of a 248 nm laser, the LITV signals of La_xSr_1-xTiO₃films were observed and showed dependence on the La doping level, which can be explained by the changes in the light absorption coefficient, thermal conductivity, and optical penetration depth. The optimized LITV signal was observed with a peak voltage of 23.25 V and a decay time of 106 ns under the laser power density of 1.0 mJ mm^-2. The high peak voltage and fast response time of La_xSr_1-xTiO₃show great potential in the field of light and thermal detection.