Deposition of ZnO thin films with different powers using RF magnetron sputtering method: Structural, electrical and
Bassam Abdallah1, Walaa Zetoun1, Ahamad Tello1
1Department of Physics, Atomic Energy Commission, P. O. Box 6091, Damascus, Syria.
Heliyon
|March 25, 2024
Summary
This study details the creation of high-quality Zinc Oxide thin films using magnetron sputtering. These films exhibit excellent optical and electrical properties, making them suitable for photovoltaic cells and optoelectronics.
Area of Science:
- Materials Science
- Solid State Physics
Background:
- Zinc Oxide (ZnO) is a versatile semiconductor with applications in electronics and optics.
- Controlling the properties of ZnO thin films is crucial for device performance.
Purpose of the Study:
- To deposit and characterize Zinc Oxide thin films with good crystallinity.
- To investigate the influence of Radio Frequency (RF) power on film properties.
- To assess the suitability of these films for optoelectronic applications.
Main Methods:
- Magnetron sputtering deposition on glass and Si(100) substrates.
- Characterization using X-ray Diffraction (XRD), MicroRaman spectroscopy, Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Energy Dispersive X-ray spectroscopy (EDX).
- Optical (UV-Vis, Photoluminescence) and electrical (I-V, C-V) property measurements.
Main Results:
- ZnO films with wurtzite structure and (002) preferential orientation were achieved.
- Surface morphology, stoichiometry, optical transmittance, and photoluminescence were analyzed.
- Electrical properties of ZnO on Silicon films were studied as a function of RF power.
Conclusions:
- Optimized RF power enables deposition of high-quality ZnO thin films.
- The films demonstrate high transparency and desirable electrical characteristics.
- These ZnO films are promising for applications in photovoltaic cells and optoelectronics.
Keywords:
Electrical measurementOptical and structural characteristicsRF magnetron sputteringZnO films
