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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Physical insight of random fluctuation in metal/IGZO Schottky barriers for low-variation contact optimal design

Lijun Xu1,2, Kun Luo1,2, Guohui Zhan1,2

  • 1The Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. wuzhenhua@ime.ac.cn.

Physical Chemistry Chemical Physics : PCCP
|March 27, 2024
PubMed

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