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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

399
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
399
Characteristics of JFET01:21

Characteristics of JFET

492
Junction Field Effect Transistors (JFETs) exhibit specific operational characteristics based on the relationship between the drain current (id) and the drain-source voltage (Vds), along with varying gate-source voltages (Vgs).
The core of a JFET's operation is controlling drain current by modulating the gate-source voltage. When the drain and gate voltage are set to zero, the JFET exhibits no net current flow, representing a state of equilibrium. The drain current increases linearly as the...
492
Biasing of FET01:22

Biasing of FET

269
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
269
Characteristics of MOSFET01:17

Characteristics of MOSFET

373
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
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MOSFET Amplifiers01:17

MOSFET Amplifiers

156
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
156
MOSFET01:16

MOSFET

467
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
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Temperature-Dependent Feedback Operations of Triple-Gate Field-Effect Transistors.

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  • 1Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.

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Triple-gate feedback field-effect transistors (TG FBFETs) show temperature-dependent latch-up voltage shifts. These devices maintain ideal switching characteristics across a wide temperature range, with wider memory windows at higher temperatures.

Keywords:
TCAD simulationfeedback field-effect transistor (FBFET)latch-up phenomenonpositive feedback looptemperature-dependent

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Area of Science:

  • Semiconductor device physics
  • Solid-state electronics
  • Materials science

Background:

  • Triple-gate feedback field-effect transistors (TG FBFETs) are crucial components in modern electronics.
  • Understanding their electrical characteristics across varying temperatures is essential for reliable device operation.

Purpose of the Study:

  • To investigate the electrical properties of TG FBFETs.
  • To analyze the impact of temperature (-200 °C to 280 °C) on their performance, particularly latch-up voltage and switching characteristics.

Main Methods:

  • Experimental characterization of TG FBFETs.
  • Electrical measurements conducted over a wide temperature range.
  • Analysis of latch-up voltage, subthreshold swing, and memory window variations.

Main Results:

  • Latch-up voltage shifts significantly with temperature changes due to altered charge carrier concentrations.
  • Ideal subthreshold swings (6.6 mV/dec for n-channel, 7.2 mV/dec for p-channel) were observed.
  • Memory window widens with increasing temperature, exceeding 3.05 V (n-channel) and 1.42 V (p-channel) above 85 °C.

Conclusions:

  • TG FBFETs exhibit robust switching characteristics despite temperature-induced latch-up voltage shifts.
  • The temperature-dependent behavior of TG FBFETs offers potential for temperature-sensitive applications and memory devices.