Effect of Anisotropy of Reduced Graphene Oxide on Thermal and Electrical Properties in Silicon Carbide Matrix...

Reduced graphene oxide, due to its structure, exhibits anisotropic properties, which are particularly evident in electrical and thermal conductivity. This study focuses on examining the influence of reduced graphene oxide in silicon carbide on these properties in directions perpendicular and parallel to the direction of the aligned rGO flakes in produced composites. Reduced graphene oxide is characterized by very high in-plane thermal and electrical conductivity. It was observed that the addition of rGO increases thermal conductivity from 64 W/mK (reference sample) up to 98 W/mK for a SiC-3 wt.% rGO composite in the direction parallel to the rGO flakes. In the perpendicular direction, the values were slightly lower, reaching up to 84 W/mK. The difference observed in electrical conductivity values is more significant and is 1-2 orders of magnitude higher for the flakes' alignment direction. The measured electrical conductivity increased from 1.2710^-8 S/m for the reference SiC sinter up to 1.55 × 10^-5 S/m and 1.2410^-4 S/m for the composites with 3 wt.% rGO for the perpendicular and parallel directions, respectively. This represents an enhancement of four orders of magnitude, with a clearly visible influence of the anisotropy of the rGO. The composite's enhanced electrical and thermal conductivity make it particularly attractive for electronic devices and high-power applications.