A Sensitivity-Enhanced Vertical-Resonant MEMS Electric Field Sensor Based on TGV Technology

Area of Science:

• Microelectromechanical Systems (MEMS)
• Sensor Technology
• Applied Electromagnetics

Background:

• Wafer-level vacuum-packaged electric field sensors require enhanced sensitivity for improved performance.
• Traditional designs face limitations in electric field coupling and transmission efficiency.

Purpose of the Study:

• To propose and validate a novel vertical-resonant MEMS electric field sensor architecture.
• To leverage Through Glass Via (TGV) technology for improved sensor fabrication and performance.
• To enhance the sensitivity and linearity of electric field measurements.

Main Methods:

• Innovative application of TGV technology for fabricating the electric field sensing and vertically-driven covers.
• Design of a microsensor comprising electric field sensing cover, drive cover, and SOI-based microstructures.
• Utilizing a metal plate and pillar to concentrate the external electric field onto the sensing area.
• Finite element simulation for optimizing key sensor parameters.
• Fabrication of a prototype and experimental characterization of its performance.

Main Results:

• Achieved a sensitivity of 0.82 mV/(kV/m) within an electrostatic electric field range of 0-50 kV/m.
• Demonstrated a linearity of 0.65% for the developed sensor.
• Successfully reduced coupling capacitance between the silicon plate and packaging structure.

Conclusions:

• The proposed vertical-resonant MEMS electric field sensor effectively enhances electric field transmission and sensitivity.
• TGV technology integration offers a viable pathway for fabricating high-performance electric field sensors.
• The sensor exhibits excellent linearity and sensitivity, suitable for various applications.