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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
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Efficiency improvement by using metal-insulator-semiconductor structure in InGaN/GaN micro-light-emitting diodes.

Jian Yin1, David Hwang2, Hossein Zamani Siboni2

  • 1Department of Electrical and Computer Engineering, Waterloo Institute Nanotechnology, University of Waterloo, Waterloo, ON, N2L 3G1, Canada.

Frontiers of Optoelectronics
|March 28, 2024
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Summary

Researchers developed metal-insulator-semiconductor (MIS) structures for Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) micro-light-emitting diodes (micro-LEDs). Applying negative bias to the sidewall electrode enhances external quantum efficiency (EQE) by controlling surface recombination.

Keywords:
EQE improvementGaNMicro-LEDMicro-fabrication

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Area of Science:

  • Semiconductor Physics
  • Optoelectronics
  • Materials Science

Background:

  • Micro-light-emitting diodes (micro-LEDs) are crucial for advanced display technologies.
  • Efficiency limitations in InGaN/GaN micro-LEDs hinder widespread adoption.
  • Surface recombination is a significant factor affecting micro-LED performance.

Purpose of the Study:

  • To propose and investigate a novel metal-insulator-semiconductor (MIS) structure on the sidewall of InGaN/GaN micro-LEDs.
  • To enhance the external quantum efficiency (EQE) of micro-LEDs.
  • To understand the underlying mechanisms controlling EQE in MIS micro-LEDs.

Main Methods:

  • Fabrication of InGaN/GaN micro-LEDs with sidewall MIS structures.
  • Electroluminescence (EL) measurements on micro-LEDs with varying sidewall electrode biases.
  • Band structure analysis to elucidate the impact of electric fields on surface recombination.

Main Results:

  • Application of negative bias to the sidewall electrode significantly increased EQE in 10 μm diameter devices.
  • Positive bias on the sidewall electrode led to a decrease in EQE.
  • Band structure analysis confirmed that sidewall electric fields modulate surface electron density and control Shockley-Read-Hall (SRH) recombination.

Conclusions:

  • The sidewall MIS structure offers a viable pathway to improve InGaN/GaN micro-LED efficiency.
  • Controlling surface recombination via electric field modulation is key to enhancing EQE.
  • Future improvements can be achieved by reducing insulator thickness and exploring alternative materials.