Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

254
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
254
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

350
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
350
Biasing of P-N Junction01:16

Biasing of P-N Junction

528
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
528
P-N junction01:11

P-N junction

525
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
525
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

743
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
743
Biasing of FET01:22

Biasing of FET

269
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
269

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Recent Advances in Natural Products for Colitis: Mechanisms and Translational Perspectives.

Veterinary sciences·2026
Same author

Reversible Tuning of Magnetic Order and Intrinsic Superconductivity in Strained FeTe Films via Stoichiometry Control.

ACS nano·2026
Same author

Autofocusing optical-resolution photoacoustic microscopy.

Ultrasonics·2026
Same author

SARS-CoV-2 infection during the first trimester leads to profound immune dysregulation at the maternal-fetal interface despite limited virus detection in placental tissues.

Nature communications·2026
Same author

Ferromagnetism of Molecular Beam Epitaxy-grown Ultra-thin Cr<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub> Films Down to the Monolayer Limit on Si Substrates.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Strong Enhancement of g-Factor in PbTe-Pb Hybrid Nanowires.

Nano letters·2026

Related Experiment Video

Updated: Jun 29, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.6K

Selective-Area-Grown PbTe-Pb Planar Josephson Junctions for Quantum Devices.

Ruidong Li1, Wenyu Song1, Wentao Miao1

  • 1State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China.

Nano Letters
|April 2, 2024
PubMed
Summary

Researchers introduce a novel PbTe-Pb hybrid material for planar Josephson junctions, a key step towards detecting Majorana zero modes. This new platform shows promising gate-tunable supercurrents and magnetic field responses.

Keywords:
PbTeplanar Josephson junctionssupercurrent interferencetopological superconductivity

More Related Videos

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.6K
Author Spotlight: Advancements in High-Performance Thermoelectric Thin Films Through Radio Frequency Magnetron Sputtering
04:22

Author Spotlight: Advancements in High-Performance Thermoelectric Thin Films Through Radio Frequency Magnetron Sputtering

Published on: May 17, 2024

2.8K

Related Experiment Videos

Last Updated: Jun 29, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.6K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.6K
Author Spotlight: Advancements in High-Performance Thermoelectric Thin Films Through Radio Frequency Magnetron Sputtering
04:22

Author Spotlight: Advancements in High-Performance Thermoelectric Thin Films Through Radio Frequency Magnetron Sputtering

Published on: May 17, 2024

2.8K

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Computing

Background:

  • Planar Josephson junctions are crucial for hosting Majorana zero modes, essential for topological quantum computing.
  • Previous research utilized 2D electron gases (InAs, InSb, InAsSb, HgTe) with superconductors (Al, Nb).

Purpose of the Study:

  • To introduce and characterize a new material platform, the PbTe-Pb hybrid, for planar Josephson junctions.
  • To explore its potential for Majorana zero mode detection.

Main Methods:

  • Thin film growth of PbTe via selective area epitaxy.
  • Fabrication of Josephson junctions using a shadow wall during Pb deposition.
  • Characterization using scanning transmission electron microscopy (STEM).
  • Electrical transport measurements including gate-tunability and magnetic field response.

Main Results:

  • A sharp semiconductor-superconductor interface was observed via STEM.
  • Gate-tunable supercurrents and multiple Andreev reflections were demonstrated.
  • Fraunhofer-like and SQUID-like interference patterns in switching current under magnetic field were observed.

Conclusions:

  • The PbTe-Pb hybrid is a viable new material platform for planar Josephson junctions.
  • The observed phenomena support its potential for Majorana zero mode detection.
  • A prototype device enabling phase bias and tunneling spectroscopy for Majorana detection was developed.