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Updated: Jun 29, 2025

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
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SCAPSM: attenuated phase-shift mask structure for EUV lithography.

Chen Li, Lisong Dong, Yayi Wei

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    |April 3, 2024
    PubMed
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    This summary is machine-generated.

    A novel attenuated phase-shift mask (Att. PSM) structure mitigates shadowing effects in extreme ultraviolet (EUV) lithography. This innovation enhances imaging contrast for advanced integrated circuit manufacturing.

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    Area of Science:

    • Optics and Photonics
    • Semiconductor Manufacturing Technology

    Background:

    • Attenuated phase-shift masks (Att. PSM) are key resolution enhancement technologies (RET) for extreme ultraviolet (EUV) lithography.
    • The reflective nature of EUV masks causes shadowing effects, degrading lithography imaging performance and contrast.

    Purpose of the Study:

    • To propose and analyze a novel Att. PSM structure to mitigate shadowing effects.
    • To enhance the imaging contrast in EUV lithography.

    Main Methods:

    • Introduction of an absorbent sidewall along the mask absorber edge.
    • Theoretical analysis using Kirchhoff approximation for mask diffraction.
    • Validation through rigorous lithography simulations.

    Main Results:

    • The novel Att. PSM structure effectively mitigates diffraction and shadowing effects.
    • Theoretical analysis predicted improved imaging performance.
    • Simulations confirmed enhanced imaging contrast in EUV lithography.

    Conclusions:

    • The proposed Att. PSM with an absorbent sidewall is a viable solution for improving EUV lithography imaging contrast.
    • This technology holds potential for advanced integrated circuit (IC) manufacturing.