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Updated: Jun 29, 2025

Single-Digit Nanometer Electron-Beam Lithography with an Aberration-Corrected Scanning Transmission Electron Microscope
Published on: September 14, 2018
A novel attenuated phase-shift mask (Att. PSM) structure mitigates shadowing effects in extreme ultraviolet (EUV) lithography. This innovation enhances imaging contrast for advanced integrated circuit manufacturing.
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