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High-Throughput Total Internal Reflection Fluorescence and Direct Stochastic Optical Reconstruction Microscopy Using a Photonic Chip

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Imaging electromagnetic boundary of microdevice using a wide field quantum microscope.

Huan Fei Wen, Yanjie Liu, Wenyuan Hao

|April 4, 2024

Summary

This study introduces a novel micron-scale magnetic field characterization method for electronic devices using diamond nitrogen-vacancy (NV) centers. The technique accurately maps electromagnetic anomalies, crucial for device design and diagnosis.

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Area of Science:

Quantum Sensing
Materials Science
Electrical Engineering

Background:

Characterizing electromagnetic fields in electronic devices is vital for design and diagnostics.
Existing methods may lack the resolution or sensitivity required for micron-scale analysis.

Purpose of the Study:

To develop and validate a micron-scale magnetic field characterization method for electromagnetic devices.
To utilize diamond nitrogen-vacancy (NV) centers as a quantum sensor for this purpose.

Main Methods:

Employed wide-field magnetic field measurement using diamond nitrogen-vacancy (NV) centers.
Applied differential gradient method to approximate the magnetic gradient tensor.
Utilized tensor invariants for visualizing anomalous region boundaries.

Main Results:

Achieved rapid acquisition of first-order magnetic field distribution.
Identified anomalous regions with an error rate below 12.5%.
Experimental results showed high similarity to theoretical simulations (7% error).

Conclusions:

The proposed method enables precise micron-scale electromagnetic field characterization of devices.
Diamond NV centers offer a powerful tool for advanced quantum magnetic sensing applications.
This work advances electromagnetic field analysis and quantum sensor technology.