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Optimized wideband and compact multifunctional photonic device based on Sb2S3 phase change material
Optics Express
|April 4, 2024
Summary
This study introduces a compact 1×2 photonic switch using silicon-on-insulator and Sb2S3, achieving low loss and crosstalk across a wide bandwidth. The device also functions as a 3 dB power splitter.
Area of Science:
- Photonics and Optical Engineering
- Materials Science
- Integrated Optics
Background:
- Photonic switches are crucial for optical communication networks.
- Developing compact and efficient photonic devices is an ongoing challenge.
- Phase change materials offer tunable optical properties for advanced photonic applications.
Purpose of the Study:
- To design and demonstrate a novel 1×2 photonic switch.
- To integrate a phase change material (Sb2S3) with a silicon-on-insulator platform.
- To explore multifunctional capabilities including power splitting.
Main Methods:
- Design of a 1×2 photonic switch utilizing silicon-on-insulator (SOI) technology.
- Integration of antimony(III) sulfide (Sb2S3) as a phase change material (PCM).
- Optimization using the direct binary search (DBS) algorithm.
- Characterization of optical performance including insertion loss and crosstalk.
Main Results:
- Achieved a wide operating bandwidth from 1450 to 1650 nm.
- Demonstrated low insertion loss (<0.7 dB) and crosstalk (< -20 dB) over 200 nm bandwidth.
- Device exhibits a compact footprint of 3×4 µm².
- Successfully operated as both a 1×2 photonic switch (IL: 0.7 dB, CT: -13.5 dB) and a 3 dB power splitter (IL: <0.5 dB) in the C-band.
Conclusions:
- The designed photonic switch offers excellent performance metrics and a compact size.
- The integration of Sb2S3 on SOI enables versatile photonic device functionalities.
- This device holds potential for advanced optical communication and signal processing applications.

