Formation of E-band luminescence-active centers in bismuth-doped silica fiber via atomic layer deposition

In this study, a Si defect structure was added into the silica network in order to activate the bismuth and silica structure active center. TD-DFT theoretical simulations show that the Bi and Si ODC(I) models can excite the active center of the E-band at 1408 nm. Additionally, the Bi-doped silica fiber (BDSF) with improved fluorescence was fabricated using atomic layer deposition (ALD) combined with the modified chemical vapor deposition (MCVD) technique. Some tests were used to investigate the structural and optical properties of BDSF. The UV-VIS spectral peak of the BDSF preform is 424 cm^-1, and the binding energy of XPS is 439.3 eV, indicating the presence of Bi° atom in BDSF. The Raman peak near 811 cm^-1 corresponds to the Bi-O bond. The Si POL defect lacks a Bi-O structure, and the reason for the absence of simulated active center from the E-band is explained. A fluorescence spectrometer was used to analyze the emission peak of a BDSF at 1420 nm. The gain of the BDSF based optical amplifier was measured 28.8 dB at 1420 nm and confirmed the effective stimulation of the bismuth active center in the E-band.