Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Switching of BJT01:22

Switching of BJT

419
Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
419
Characteristics of MOSFET01:17

Characteristics of MOSFET

373
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
373
Biasing of FET01:22

Biasing of FET

269
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
269
Clamper Circuit01:14

Clamper Circuit

420
A clamper circuit, also known as a DC restorer, represents a specialized variant of the rectifier circuit, notable for its method of taking the output across the diode rather than the capacitor. This configuration lends to several distinctive applications, particularly in handling square wave inputs.
Within this circuit, the diode's orientation prompts the capacitor to charge up to the level of the most negative peak of the input signal. Upon reaching this state, the diode ceases to...
420
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

254
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
254
Biasing of P-N Junction01:16

Biasing of P-N Junction

528
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
528

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Infinite-memory classical wave-particle entities, attractor-driven active particles, and the diffusionless Lorenz equations.

Chaos (Woodbury, N.Y.)·2024
Same author

Dynamics, interference effects, and multistability in a Lorenz-like system of a classical wave-particle entity in a periodic potential.

Chaos (Woodbury, N.Y.)·2023
Same author

Attractor-driven matter.

Chaos (Woodbury, N.Y.)·2023
See all related articles

Related Experiment Video

Updated: Jun 29, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

9.6K

Unpredictable tunneling in a retarded bistable potential.

Álvaro G López1, Rahil N Valani2

  • 1Nonlinear Dynamics, Chaos and Complex Systems Group, Departamento de Física, Universidad Rey Juan Carlos, Tulipán s/n, 28933 Móstoles, Madrid, Spain.

Chaos (Woodbury, N.Y.)
|April 4, 2024
PubMed
Summary
This summary is machine-generated.

We discovered a novel tunneling-like effect in a damped particle system with time-delayed feedback. This phenomenon, driven by crisis-induced intermittency, leads to unpredictable chaotic transitions between potential wells.

More Related Videos

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.4K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.6K

Related Experiment Videos

Last Updated: Jun 29, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

9.6K
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.4K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.6K

Area of Science:

  • Nonlinear Dynamics
  • Complex Systems Physics

Background:

  • Studying particle dynamics in double-well potentials is crucial for understanding various physical phenomena.
  • State-dependent time-delayed feedback introduces complex behaviors in dynamical systems.

Purpose of the Study:

  • To investigate the dynamics of a damped particle in a double-well potential with state-dependent time-delayed feedback.
  • To analyze the emergence of chaotic transitions and tunneling-like effects.
  • To characterize the underlying mechanisms, including crisis-induced intermittency and chaotic scattering.

Main Methods:

  • Bifurcation analysis to identify parameter regions of interest.
  • Calculation of residence time distributions and scaling laws.
  • Investigation of first passage times and uncertainty dimension.
  • Largest Lyapunov exponent calculation to assess dynamics and robustness.

Main Results:

  • Observed multistability with two distinct attractors (limit cycle or strange attractor).
  • Identified chaotic transitions between wells due to enhanced time-delay feedback, resembling tunneling.
  • Rationalized the tunneling-like effect as crisis-induced intermittency.
  • Found a Cantor-like fractal set in the initial history space, indicating hyperbolic chaotic scattering.
  • Demonstrated unpredictable residence times via non-integer uncertainty dimension.

Conclusions:

  • Time-delayed feedback can induce chaotic transitions and tunneling-like behavior in double-well systems.
  • Crisis-induced intermittency is the mechanism behind the observed tunneling effect.
  • The system exhibits characteristics of hyperbolic chaotic scattering with fractal properties.