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Efficient Full-Frequency GW Calculations Using a Lanczos Method
Weiwei Gao1, Zhao Tang2, Jijun Zhao3
1Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024, China.
Abstract:
The GW approximation is widely used for reliable and accurate modeling of single-particle excitations. It also serves as a starting point for many theoretical methods, such as its use in the Bethe-Salpeter equation (BSE) and dynamical mean-field theory. However, full-frequency GW calculations for large systems with hundreds of atoms remain computationally challenging, even after years of efforts to reduce the prefactor and improve scaling. We propose a method that reformulates the correlation part of the GW self-energy as a resolvent of a Hermitian matrix, which can be efficiently and accurately computed using the standard Lanczos method. This method enables full-frequency GW calculations of material systems with a few hundred atoms on a single computing workstation. We further demonstrate the efficiency of the method by calculating the defect-state energies of silicon quantum dots with diameters up to 4 nm and nearly 2,000 silicon atoms using only 20 computational nodes.
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