Related Experiment Video
Updated: Jun 20, 2026

Writing and Low-Temperature Characterization of Oxide Nanostructures
Published on: July 18, 2014
Interlayer coupling modulated for thermoelectric transport characterization of black arsenic nanoscale devices
Yuechao Shi1,2, Jintao Xu2, Yifeng Qiu1
1School of Physical Science and Technology, Xinjiang University, Urumqi 830046, People's Republic of China.
Abstract:
Modulating interlayer coupling modes can effectively enhance the thermoelectric properties of nanomaterials or nanoscale devices. By using density functional theory combined with non-equilibrium Green's function method, we investigate the thermoelectric properties of zigzag-type black arsenic nanoscale devices with varying interlayer coupling modes. Our results show that altering the interlayer coupling mode significantly modulates the thermoelectric properties of the system. Specifically, we consider four coupling modes with different strengths, by modulating different interlayer overlap patterns. Notably, in the weaker interlayer coupling mode, the system exhibits enhanced thermoelectric properties due to increased interface phonon scattering, for example, the M4reaching a peak value of 2.23 atμ= -0.73 eV. Furthermore, we explore the temperature-dependent behavior of each coupling model. The results suggest that the thermoelectric characteristics are more sensitive to temperature variations in the weaker coupling modes. These insights provide valuable guidance for enhancing the thermoelectric performance of nanoscale devices through precise interlayer coupling modulation.
More Related Videos
08:12Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
05:39Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Related Concept Videos
Non-ohmic Devices
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Schottky Barrier Diode