Controllable physicochemical properties of WO thin films grown under glancing angle
Rupam Mandal1,2, Aparajita Mandal1, Alapan Dutta1,2
1SUNAG Laboratory, Institute of Physics, Bhubaneswar 751 005, Odisha, India.
Beilstein Journal of Nanotechnology
|April 9, 2024
Summary
This study explores tungsten oxide (WO) thin films for optoelectronics. Optimal film thickness is crucial for regulating device performance and series resistance in WO/p-Si heterojunctions.
Area of Science:
- Materials Science
- Nanotechnology
- Solid State Physics
Background:
- Nanostructured thin films are vital for optoelectronic applications.
- Tungsten oxide (WO) is a promising material for such devices.
- Controlling film properties is key to optimizing device performance.
Purpose of the Study:
- To investigate the physicochemical properties of nanostructured WO thin films.
- To understand the influence of film thickness and annealing on WO properties.
- To correlate these properties with the performance of WO/p-Si heterojunction diodes.
Main Methods:
- Radio-frequency magnetron sputtering for film deposition.
- Glancing angle deposition (87°) to control nanostructure.
- Post-growth annealing treatments.
- Local probe analyses (morphology, work function).
- Photoelectron spectroscopy and I-V characteristics.
Main Results:
- Thickness-dependent modulation of WO film morphology and work function.
- Correlation between film properties and device performance.
- Identification of a critical WO thickness for regulating rectification ratio.
- Increased series resistance in thicker WO films.
Conclusions:
- Physicochemical properties of WO thin films are strongly thickness-dependent.
- Annealing and thickness control are essential for optimizing optoelectronic device performance.
- These findings aid in fabricating efficient WO-based devices, including photovoltaic cells.
