UV photodetectors based on W-doped ZnO thin films

W-doped ZnO thin films deposited on Si substrates with (100) orientation by sol-gel spin coating method at temperature 500 °C. W/Zn atomic ratio varies from 0% to 4%. Then, the UV detection performance analysis ofp-nheterojunction UV photodetectors based on W-doped ZnO/Si is analyzed. The current-voltage curves of W-doped ZnO/Si are investigated in dark and exhibit diode-like rectifying behavior. Among doped ZnO/Si, sample with atomic ratio of W/Zn = 2% is the best candidate to study photodetector characteristics in UV range. The resulting device exhibits a rectification ratioRRof 5587 at ±5 V, a higher responsivity of 3.84 A W^-1and a photosensitivity value of 34 at 365 nm under 0.5 mW cm^-2. The experimental findings reveal that the UV detection performance of the heterojunction-based photodetectors strongly dependent on the properties of metal oxide layer. The main goal of this work is to investigate the effect of W doping on the performance of ZnO/Si based photodetectors. Based on our results, it is observed that 2 at% of W dopant is the optimum amount of doping for high performance photodetector of ZnO:W/Si heterojunction thanks to the suppressed recombination ratio and enhanced carrier separation properties in the depletion zone.