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Bismuth-Based Perovskite Derivates with Thermal Voltage Exceeding 40 mV/K
Vanira Trifiletti1,2, Matteo Massetti3, Alberto Calloni4
1Department of Materials Science and L-NESS, University of Milano-Bicocca, Via Cozzi 55, I-20125 Milan, Italy.
Summary
Bismuth-based perovskites show promising thermoelectric properties, with thermal voltage exceeding 40 mV K-1. Chalcogenide doping significantly reduced resistivity, enhancing their potential for low-cost thermoelectric devices.
Area of Science:
- Materials Science
- Solid State Physics
- Energy Conversion
Background:
- Thermoelectric materials convert heat to electricity, offering a sustainable energy source.
- Halide perovskites are promising low-cost, scalable thermoelectric materials.
- Bismuth-based perovskites are being investigated for their thermoelectric potential.
Purpose of the Study:
- To investigate the thermal voltage response of bismuth-based perovskite derivatives.
- To enhance the electrical conductivity of these materials through chalcogenide doping.
- To explore the structural, compositional, and electronic properties of doped and undoped films.
Main Methods:
- Thin films produced via drop-casting or spin coating.
- Sulfur doping introduced using bismuth triethylxanthate.
- Characterization using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, SEM, EDX, UV-Vis, and photoluminescence.
Main Results:
- Sulfur doping reduced resistivity by two orders of magnitude.
- Thermal voltage exceeded 40 mV K-1 near 300 K in both doped and undoped samples.
- Physical-chemical analysis confirmed sulfur substitution and structural integrity.
Conclusions:
- Bismuth-based perovskites exhibit significant thermoelectric properties.
- Chalcogenide doping is an effective strategy to improve electrical conductivity.
- These materials show potential for efficient and scalable thermoelectric applications.
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