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Updated: Jun 28, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Thickness-Dependent Nanoscale Elastic Stiffening of Chemical Vapor Deposited Atomically Thin 2H-MoS2 Films
Kalaiarasan Meganathan1, G Mangamma2, M J Swaminadhan3
12D Materials and Devices Laboratory (2DML), Sir C. V. Raman Research Park, Department of Physics and Nanotechnology, SRM Institute of Science and Technology (SRMIST), Kattankulathur 603203, Chennai, India.
Abstract:
Understanding the nanoscale elastic-size-effects of atomically thin transition-metal dichalcogenides (TMDs) as a function of thickness underpins the avenue of flexible 2D electronics. In this work, we employed the atomic force acoustic microscopy (AFAM) technique to investigate the thickness-dependent elastic properties of CVD grown 2H-MoS2 films. The monolayer MoS2 exhibited a Young's modulus of 273 ± 27 GPa. Our systematic analysis from bulk to monolayer suggests that the 2H-MoS2 phase exhibits nanoscale elastic-stiffening behavior with decreasing number of layers (thickness). The Young's modulus increased by a factor of ∼2.7 for monolayer MoS2 when compared with the bulk. First-principle DFT calculations affirm the nanoscale elastic-stiffening behavior of MoS2 with decreasing number of layers. Our findings suggest that the observed elastic stiffening is due to the interlayer sliding, which may be facilitated by defects in MoS2 layers. The observed elastic stiffening may be of potential importance for understanding TMD based nanomechanical devices.
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