Generation and Storage of Random Voltage Values via Ring Oscillators Comprising Feedback Field-Effect Transistors.

Area of Science:

• Electronics
• Materials Science
• Computer Science

Background:

• Traditional random number generation methods face limitations in speed and physical implementation.
• Integrating memory and logic functions is crucial for efficient computing.

Purpose of the Study:

• To demonstrate a novel method for generating and storing random voltage values.
• To explore the application of feedback field-effect transistors (FBFETs) in physical functions.

Main Methods:

• Utilizing a ring oscillator circuit composed of FBFETs.
• Leveraging the logic-in-memory function of FBFETs to extract analog voltage outputs.
• Analyzing the probability distribution and storage stability of generated random variables.

Main Results:

• The ring oscillator produced uniform probability distributions for binary outputs (51.6% for logic 0, 48.4% for logic 1).
• Generated analog voltages, representing binary random variables, were stably stored for over 5000 seconds.
• Demonstrated the extraction of continuous output voltages from oscillatory cycles.

Conclusions:

• The FBFET-based ring oscillator effectively generates and stores random voltage values.
• This approach shows significant potential for applications in advanced physical functions.
• The technology is promising for developing next-generation true random number generators.