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Updated: Jun 28, 2025
Synthesis of In37P20O2CR51 Clusters and Their Conversion to InP Quantum Dots
Published on: May 7, 2019
Effect of Lattice Disorder on Exciton Dynamics in Copper-Doped InP/ZnSeS1- Core/Shell Quantum Dots
Kai-Chun Chou1, Le-Chun Li2, Kai-An Tsai2
1Department of Chemistry and Biochemistry, University of California, Santa Cruz, California 95064, United States.
Abstract:
InP/ZnSeS1- core/shell quantum dots (QDs) with varying Cu concentrations were synthesized by a one-pot hot-injection method. X-ray diffraction and high-resolution transmission electron microscopy results indicate that Cu doping did not alter the crystal structure or particle size of the QDs. The optical shifts in UV-visible absorption and photoluminescence (PL) suggest changes in the electronic structure and induction of lattice disorder due to Cu doping. Ultrafast transient absorption spectroscopy (TAS) reveled that a higher Cu-doping level leads to faster charge carrier recombination, likely due to increased nonradiative decay from defect states. Time-resolved PL (TRPL) studies show longer average lifetimes of charge carriers with increased Cu doping. These findings informed the development of a kinetic model to better understand how Cu-induced disorder affects charge carrier dynamics in the QDs, which is important for emerging applications of Cu-doped InP/ZnSeS1- QDs in optoelectronics.
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