Related Experiment Video
Updated: Jun 28, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
On the lattice ground state of densely packed hard ellipses
1Institute for Theoretical Physics, TU Wien, Wiedner Hauptstraße 8-10, A-1040 Wien, Austria.
Abstract:
Among lattice configurations of densely packed hard ellipses, Monte Carlo simulations are used to identify the so-called parallel and diagonal lattices as the two favorable states. The free energies of these two states are computed for several system sizes employing the Einstein crystal method. An accurate calculation of the free energy difference between the two states reveals the parallel lattice as the state with the lowest free energy. The origin of the entropic difference between the two states is further elucidated by assessing the roles of the translational and rotational degrees of freedom.
More Related Videos
10:35Using Microwave and Macroscopic Samples of Dielectric Solids to Study the Photonic Properties of Disordered Photonic Bandgap Materials
Published on: September 26, 2014
06:57Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Related Concept Videos
Trends in Lattice Energy: Ion Size and Charge
Metallic Solids
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
Lattice Centering and Coordination Number
Types of Unit Cells
Imagine taking a large number of identical...
Atomic Orbitals
Structures of Solids
Bewley Lattice Diagram