Related Experiment Video
Updated: Aug 1, 2026

11:13
Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
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Publisher Correction: Deep-potential enabled multiscale simulation of gallium nitride devices on boron arsenide
Jing Wu1,2, E Zhou1, An Huang1
1State Key Laboratory of Advanced Design and Manufacturing Technology for Vehicle, College of Mechanical and Vehicle Engineering, Hunan University, Changsha, 410082, P. R. China.
Nature Communications
|April 16, 2024
Abstract
No abstract available in PubMed .
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Non-ohmic Devices
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