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Ultrafast switching in spin field-effect transistors based on borophene nanoribbons
Farzaneh Ghasemzadeh1, Mohsen Farokhnezhad2, Mahdi Esmaeilzadeh1
1Department of Physics, Iran University of Science and Technology, Narmak, Tehran 16844, Iran. mahdi@iust.ac.ir.
Physical Chemistry Chemical Physics : PCCP
|April 17, 2024
Summary
Borophene nanoribbons enable ultrafast spintronics. This study shows borophene spin field-effect transistors (FETs) offer superior spin filtering and higher current than graphene or silicene FETs.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Borophene exhibits high carrier mobility and long spin coherence length, making it promising for ultrafast spintronics.
- Datta-Das field-effect transistors (FETs) are key components in spintronic devices.
Purpose of the Study:
- Investigate the spin-dependent conductance of a Datta-Das FET based on armchair β12-borophene nanoribbons (BNRs).
- Analyze the device's performance as a tunable spin filter under Rashba spin-orbit coupling (SOC).
Main Methods:
- Utilized the tight-binding (TB) Hamiltonian and non-equilibrium Green's function (NEGF) method for calculations.
- Simulated spin FETs with ferromagnetic (FM) insulator electrodes in parallel and anti-parallel configurations.
- Incorporated Rashba spin-orbit coupling (SOC) and electron-electron (e-e) interactions.
Main Results:
- The borophene spin FET acts as a controllable spin filter, modulated by gate voltage and Rashba SOC strength.
- An energy gap appears in anti-parallel configurations, which can be spin-dependent.
- Electron-electron interactions enhance spin precession and strengthen the Rashba SOC effect.
- Borophene spin FETs demonstrate significantly higher current magnitude and Ion/Ioff ratios compared to graphene and silicene counterparts.
Conclusions:
- Armchair β12-borophene nanoribbons are highly effective for ultrafast spintronic applications.
- The gate voltage provides tunability for current-voltage characteristics and spin filtering.
- Borophene-based spin FETs significantly outperform graphene and silicene spin FETs in key performance metrics.
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