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Dynamical Nonlinear Inversion of the Surface Photovoltage at Si(100)
Friedrich Roth1,2, Johannes Mahl3, Mario Borgwardt3
1Institute of Experimental Physics, TU Bergakademie Freiberg, 09599 Freiberg, Germany.
Physical Review Letters
|April 19, 2024
Summary
Surface photovoltage (SPV) in silicon exhibits a surprising sign reversal at high light fluences for certain p-doping concentrations. This phenomenon indicates a shift in electronic excitation from the semiconductor bulk to its surface.
Area of Science:
- Semiconductor physics
- Surface science
- Optoelectronics
Background:
- Surface photovoltage (SPV) arises from light-induced charge carrier excitation in doped semiconductors with band bending.
- SPV sign depends on doping type, and amplitude saturates with light fluence, determined by doping concentration.
Purpose of the Study:
- Investigate SPV behavior in Si(100) at various doping levels and high light fluences.
- Characterize the influence of illumination fluence on SPV sign and amplitude.
Main Methods:
- Experimental investigation of Si(100) samples.
- Controlled illumination with 532 nm photons at varying fluences.
- Measurement of surface photovoltage response.
Main Results:
- Observed a sign reversal of SPV for specific p-doping concentrations under high light fluences.
- SPV amplitude showed saturation with increasing light fluence, as expected.
- The observed sign reversal is a novel effect not previously reported.
Conclusions:
- The SPV sign reversal suggests a crossover in dominant electronic excitation mechanisms.
- High light fluences can induce a transition from bulk to surface-dominated electronic processes in semiconductors.
- This finding offers new insights into semiconductor surface and bulk interactions under illumination.
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