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Updated: Jun 28, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Phase-field crystal modeling of graphene/hexagonal boron nitride interfaces
1Shrikant Nanomaterials Research Pvt. Ltd., Nagpur-440024, India. shrikantchanne@rediffmail.com.
Abstract:
Two-dimensional (2D) materials such as graphene and hexagonal boron nitride (h-BN) are an essential class of materials with enhanced structural and electronic properties compared to their bulk counterparts. The phase-field crystal (PFC) model can reach diffusive time scales to study nucleation, growth of crystallites, and relaxation of strain-driven 2D monolayers that are much larger in comparison to molecular dynamics (MD) and quantum mechanical density functional theory (QMDFT) methods while retaining atomic resolution. The model also naturally incorporates an atomic length scale and elastic and plastic deformations. We simulate the morphological transition of the crystal growth of various equilibrium crystal shapes. In this work, we generalize the one-mode PFC model to study the graphene/h-BN heterostructure interface by using conserved dynamics to describe the dynamics of the model. The model was used to find the equilibrium shape of the crystal of the h-BN crystal embedded in a graphene monolayer.
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