Related Experiment Video
Updated: Jun 28, 2025

Environmental Dynamic Mechanical Analysis to Predict the Softening Behavior of Neural Implants
Published on: March 1, 2019
Phase Transition in Silicon from Machine Learning Informed Metadynamics
Mangladeep Bhullar1, Zihao Bai1,2,3, Akinwumi Akinpelu1
1Department of Physics and Engineering Physics, University of Saskatchewan, Saskatoon, Saskatchewan, S7N 5E2, Canada.
Abstract:
Investigating reconstructive phase transitions in large-sized systems requires a highly efficient computational framework with computational cost proportional to the system size. Traditionally, widely used frameworks such as density functional theory (DFT) have been prohibitively expensive for extensive simulations on large systems that require long-time scales. To address this challenge, this study employed well-trained machine learning potential to simulate phase transitions in a large-size system. This work integrates the metadynamics simulation approach with machine learning potential, specifically deep potential, to enhance computational efficiency and accelerate the study of phase transition and consequent development of grains and dislocation defects in a system. The new method is demonstrated using the phase transitions of bulk silicon under high pressure. This approach has revealed the transition path and formation of polycrystalline silicon systems under specific stress conditions, demonstrating the effectiveness of deep potential-driven metadynamics simulations in gaining insights into complex material behaviors in large-sized systems.
More Related Videos
11:33All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
09:49In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Related Concept Videos
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Transient and Steady-state Response
These test signals are integral in designing control systems to exhibit two key performance aspects: transient response and steady-state...
Time-Domain Interpretation of PD Control
Consider the example of control of motor torque. Initially, a positive...