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Crystalline Si Surface Passivation with Nafion for Bulk Defects Detection with Electron Paramagnetic Resonance
Kejun Chen1,2, Steve W Johnston2, P Craig Taylor1
1Colorado School of Mines, Golden, Colorado 80401, United States.
ACS Applied Materials & Interfaces
|April 23, 2024
Summary
Nafion, an organic copolymer, offers effective room-temperature surface passivation for silicon solar cells, enabling defect detection. This method is comparable to existing techniques and suitable for electron paramagnetic resonance spectroscopy.
Area of Science:
- Materials Science
- Semiconductor Physics
- Solar Energy
Background:
- Defect identification and mitigation in monocrystalline silicon (c-Si) solar cells are critical for high photoconversion efficiency.
- Surface defect passivation is essential for spectroscopically detecting bulk defects in c-Si.
- Conventional dielectric passivation methods require high temperatures, potentially affecting bulk defect characteristics.
Purpose of the Study:
- To investigate Nafion, an organic copolymer, as a novel room-temperature surface passivation technique for Czochralski (Cz) silicon wafers.
- To evaluate the efficacy of Nafion passivation across a wide temperature range (6–473 K) for bulk defect detection using electron paramagnetic resonance (EPR) spectroscopy.
- To compare Nafion's passivation performance against established methods like Al2O3 and liquid HF/HCl.
Main Methods:
- Surface passivation of n-type and p-type Cz Si wafers using Nafion.
- Electron paramagnetic resonance (EPR) spectroscopy for defect detection.
- Measurement of implied open-circuit voltage (iVoc) and recombination current prefactor (J0).
- Scanning electron microscopy (SEM) and photoluminescence (PL) for surface analysis.
- Testing passivation stability over time.
Main Results:
- Nafion provided comparable passivation to state-of-the-art methods at room temperature, achieving iVoc of 713 mV and J0 of 5 fA/cm² for n-type Cz Si.
- For p-type Cz Si, Nafion yielded iVoc of 682 mV and J0 of 22.4 fA/cm².
- Nafion effectively passivated laser-scribed c-Si solar cell fragments, confirmed by SEM and PL.
- EPR data confirmed the necessity of H-terminated surfaces and field-effect passivation due to fixed negative charge in Nafion.
- Passivation quality was maintained for ~24 hours but degraded long-term due to SiO2 growth.
Conclusions:
- Nafion is a promising room-temperature surface passivation material for c-Si solar cells.
- It enables effective defect detection via EPR spectroscopy, comparable to high-temperature methods.
- Further research into long-term stability and degradation mechanisms is warranted.
Keywords:
Al2O3 dielectric passivationcrystalline siliconelectron paramagnetic resonancenafionphotoluminescencesurface passivation
