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Granular Magnetization Switching in Pt/Co/Ti Structure with HfOx Insertion for In-Memory Computing Applications
Tianli Jin1, Bo Zhang1,2, Funan Tan1
1School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.
Nano Letters
|April 25, 2024
Summary
This study introduces a new HfOx layer for enhanced spin-orbit torque (SOT) efficiency in magnetic devices. This innovation enables efficient multistate storage and artificial neural network (ANN) applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Electrical Engineering
Background:
- In-memory computing relies on devices utilizing domain wall (DW) position for multiple states.
- Spin-orbit torque (SOT) is key for driving DW motion, but efficient DW pinning is crucial.
- Conventional devices face limitations in SOT efficiency and switching current density.
Purpose of the Study:
- To develop a novel device structure for efficient DW manipulation in magnetic memory applications.
- To investigate the effect of an HfOx insertion layer on SOT efficiency and switching mechanisms.
- To demonstrate the potential of the new device for multistate storage and artificial neural networks (ANNs).
Main Methods:
- Incorporation of an HfOx insertion layer at the Co/Ti interface within a Pt/Co/Ti structure.
- Experimental characterization of magnetization switching, SOT efficiency, and switching current density.
- Device testing for stable multistate storage and synaptic plasticity using pulsed currents.
- Simulation of artificial neural networks (ANNs) utilizing the developed device.
Main Results:
- Achieved granular magnetization switching via a transition from DW motion to DW nucleation.
- Demonstrated enhanced SOT efficiency and reduced switching current density compared to conventional structures.
- Realized stable multistate storage and synaptic plasticity in the Pt/Co/HfOx/Ti device.
- ANN simulations achieved a 91% accuracy rate for digital recognition tasks.
Conclusions:
- The Pt/Co/HfOx/Ti device enables efficient DW nucleation, overcoming limitations of DW motion-based devices.
- The HfOx insertion layer significantly improves SOT efficiency and reduces power consumption.
- The developed device shows strong potential for advanced multistate storage and practical ANN applications.
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