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Related Experiment Video

Updated: Jun 27, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Granular Magnetization Switching in Pt/Co/Ti Structure with HfOx Insertion for In-Memory Computing Applications.

Tianli Jin¹, Bo Zhang^1,2, Funan Tan¹

¹School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.

|April 25, 2024

Summary

This study introduces a new HfOx layer for enhanced spin-orbit torque (SOT) efficiency in magnetic devices. This innovation enables efficient multistate storage and artificial neural network (ANN) applications.

Keywords:

Multiple magnetization states artificial synapses domain wall nucleation spin−orbit torque

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Area of Science:

Materials Science
Condensed Matter Physics
Electrical Engineering

Background:

In-memory computing relies on devices utilizing domain wall (DW) position for multiple states.
Spin-orbit torque (SOT) is key for driving DW motion, but efficient DW pinning is crucial.
Conventional devices face limitations in SOT efficiency and switching current density.

Purpose of the Study:

To develop a novel device structure for efficient DW manipulation in magnetic memory applications.
To investigate the effect of an HfOx insertion layer on SOT efficiency and switching mechanisms.
To demonstrate the potential of the new device for multistate storage and artificial neural networks (ANNs).

Main Methods:

Incorporation of an HfOx insertion layer at the Co/Ti interface within a Pt/Co/Ti structure.
Experimental characterization of magnetization switching, SOT efficiency, and switching current density.
Device testing for stable multistate storage and synaptic plasticity using pulsed currents.
Simulation of artificial neural networks (ANNs) utilizing the developed device.

Main Results:

Achieved granular magnetization switching via a transition from DW motion to DW nucleation.
Demonstrated enhanced SOT efficiency and reduced switching current density compared to conventional structures.
Realized stable multistate storage and synaptic plasticity in the Pt/Co/HfOx/Ti device.
ANN simulations achieved a 91% accuracy rate for digital recognition tasks.

Conclusions:

The Pt/Co/HfOx/Ti device enables efficient DW nucleation, overcoming limitations of DW motion-based devices.
The HfOx insertion layer significantly improves SOT efficiency and reduces power consumption.
The developed device shows strong potential for advanced multistate storage and practical ANN applications.