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Updated: Jun 27, 2025

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
Published on: May 23, 2018
Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2
Fatemeh Qaderi1, Teodor Rosca1, Maurizio Burla2
1Nanoelectronic devices laboratory (Nanolab), Department of Electrical Engineering, École polytechnique fédérale de Lausanne (EPFL), EPFL STI IEL NANOLAB, ELB 335, Station 11, Lausanne, 1015 Switzerland.
Abstract:
In the quest for low power bio-inspired spiking sensors, functional oxides like vanadium dioxide are expected to enable future energy efficient sensing. Here, we report uncooled millimeter-wave spiking detectors based on the sensitivity of insulator-to-metal transition threshold voltage to the incident wave. The detection concept is demonstrated through actuation of biased VO2 switches encapsulated in a pair of coupled antennas by interrupting coplanar waveguides for broadband measurements, on silicon substrates. Ultimately, we propose an electromagnetic-wave-sensitive voltage-controlled spike generator based on VO2 switches in an astable spiking circuit. The fabricated sensors show responsivities of around 66.3 MHz.W-1 at 1 μW, with a low noise equivalent power of 5 nW.Hz-0.5 at room temperature, for a footprint of 2.5 × 10-5 mm2. The responsivity in static characterizations is 76 kV.W-1. Based on experimental statistical data measured on robust fabricated devices, we discuss stochastic behavior and noise limits of VO2 -based spiking sensors applicable for wave power sensing in mm-wave and sub-terahertz range.
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