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The Influence Mechanism of Quantum Well Growth and Annealing Temperature on In Migration and Stress Modulation

Luyi Yan1,2, Feng Liang1, Jing Yang1

  • 1State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.

Nanomaterials (Basel, Switzerland)
|April 26, 2024
PubMed

Keywords:
InGaN/GaN MQWsluminescence performancemigrationtemperature characteristics

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