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Updated: Jun 12, 2026

Atomically Traceable Nanostructure Fabrication
Published on: July 17, 2015
Offcut Substrate-Induced Defect Trapping at Step Edges
Nicolas Bonmassar1, Georg Christiani1, Gennady Logvenov1
1Max Planck Institute for Solid State Research, Heisenbergstraße 1, 70569 Stuttgart, Germany.
Abstract:
We report step edge-induced localized defects suppressing subsequent antiphase boundary formation in the bulk structure of a trilayer oxide heterostructure. The heterostructure encompasses a layer of La0.66Sr0.34MnO3 sandwiched between a superconducting La1.84Sr0.16CuO4 bottom layer and an insulating La2CuO4 top layer. The combination of a minor a-axis mismatch (0.11 Å) and a pronounced c-axis mismatch (2.73 Å) at the step edges leads to the emergence of localized defects exclusively forming at the step edge. Employing atomically resolved electron energy-loss spectroscopy maps, we discern the electronic state of those structures in the second La0.66Sr0.34MnO3 unit cell near the step edge. In particular, a reduction in the pre-edge region of the O-K edge indicates the formation of oxygen vacancies induced by the strained step edge. This study underscores our capability to control defects at the nanoscale.
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