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Updated: Jun 19, 2026

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
Published on: December 27, 2012
Tamm plasmon polariton-based planar hot-electron photodetector for the near-infrared region
Yurii V Konov1,2, Dmitrii A Pykhtin1,2, Rashid G Bikbaev1,2
1Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036, Krasnoyarsk, Russia. bikbaev@iph.krasn.ru.
Abstract:
Light-trapping devices have always been a topic of intense interest among researchers. One such device that has gained attention is the hot-electron photodetector with a tunable detection wavelength. Photodetectors based on plasmon nanostructures that provide excitation of surface plasmon polaritons are challenging to manufacture. To address this issue, a planar hot-electron photodetector based on a Tamm plasmon polariton localized in a metal-semiconductor-multilayer mirror structure has been proposed in this study. The parameters and materials of the structure were adjusted to ensure perfect absorption at the resonance wavelength. As a result, the photoresponsivity of the proposed device can reach 42.6 mA W-1 at 905 nm. For the first time, the photosensitivity was calculated analytically by solving the dispersion law for the Tamm plasmon polariton.
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