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Updated: May 3, 2026

Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation
Published on: December 21, 2015
Dramatically Enhanced Mechanical Properties of Nano-TiN-Dispersed n-Type Bismuth Telluride by Multi-Effect Modulation
Shengao Lin1, Jing Li1, Heng Yan1
1Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, China.
Abstract:
Bismuth telluride (Bi2Te3)-based alloys have been extensively employed in energy harvesting and refrigeration applications for decades. However, commercially produced Bi2Te3-based alloys using the zone-melting (ZM) technique often encounter challenges such as insufficient mechanical properties and susceptibility to cracking, particularly in n-type Bi2Te3-based alloys, which severely limit the application scenarios for bismuth telluride devices. In this work, we seek to enhance the mechanical properties of n-type Bi2Te2.7Se0.3 alloys while preserving their thermoelectrical performance by a mixed mechanism of grain refinement and the TiN composite phase-introduced pinning effect. These nanoscale processes, coupled with the addition of TiN, result in a reduction in grain size. The pinning effects of nano-TiN contribute to increased resistance to crack propagation. Finally, the TiN-dispersed Bi2Te2.7Se0.3 samples demonstrate increased hardness, bending strength and compressive strength, reaching 0.98 GPa, 36.3 MPa and 74 MPa. When compared to the ZM ingots, those represent increments of 181%, 60% and 67%, respectively. Moreover, the thermoelectric performance of the TiN-dispersed Bi2Te2.7Se0.3 samples is identical to the ZM ingots. The samples exhibit a peak dimensionless figure of merit (ZT) value of 0.957 at 375 K, with an average ZT value of 0.89 within the 325-450 K temperature range. This work has significantly enhanced mechanical properties, increasing the adaptability and reliability of bismuth telluride devices for various applications, and the multi-effect modulation of mechanical properties demonstrated in this study can be applied to other thermoelectric material systems.
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