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Lithium Niobate Electro-Optic Modulation Device without an Overlay Layer Based on Bound States in the Continuum
Guangyuan Chen1, Ning Xue1,2, Zhimei Qi1,2
1State Key Laboratory of Transducer Technology, Aerospace Information Research Institute (AIR), Chinese Academy of Sciences, Beijing 100190, China.
Micromachines
|April 27, 2024
Summary
Researchers developed a novel lithium niobate electro-optic modulator using bound states in the continuum. This device achieves low transmission loss and high modulation bandwidth for integrated optical chips.
Area of Science:
- Photonics and Optical Engineering
- Materials Science
Background:
- Electro-optic modulation devices are crucial for integrated optical chips.
- Existing thin-film lithium niobate (TFLN) devices face limitations like transmission losses and design constraints.
Purpose of the Study:
- To demonstrate a new lithium niobate electro-optic modulation device architecture.
- To overcome the limitations of current TFLN modulator designs.
Main Methods:
- Utilized a non-overlay structure based on bound states in the continuum.
- Fabricated and characterized a novel lithium niobate electro-optic modulator.
Main Results:
- Achieved a low transmission loss of approximately 1.3 dB/cm.
- Demonstrated a modulation bandwidth of up to 9.2 GHz.
- Obtained a minimum half-wave voltage of 3.3 V.
Conclusions:
- The demonstrated device offers significant improvements over existing electro-optic modulators.
- This advancement paves the way for higher-performance integrated optical chips.
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