The Study on Single-Event Effects and Hardening Analysis of Frequency Divider Circuits Based on InP HBT Process

Area of Science:

• Electronics
• Radiation Physics
• Semiconductor Devices

Background:

• Single-event effects (SEEs) pose a risk to electronic circuits, particularly in sensitive components like frequency dividers.
• Indium Phosphide Heterojunction Bipolar Transistors (InP HBTs) are susceptible to radiation-induced transient currents.
• Understanding SEE mechanisms is crucial for developing radiation-hardened electronic systems.

Purpose of the Study:

• To investigate the single-event effects (SEEs) in frequency divider circuits.
• To develop and validate a transient current model for sensitive InP HBTs under radiation.
• To propose and evaluate an effective hardening method to improve radiation tolerance.

Main Methods:

• Experimental characterization of SEEs in InP HBTs.
• Development of a transient current model considering laser energy, junction voltage, and radiation position.
• Simulation of (2:1) static frequency divider circuits using the transient current model.
• Analysis of circuit behavior under varying laser pulse timing relative to the clock signal.

Main Results:

• A transient current model for InP HBTs was established, accounting for key influencing factors.
• Simulations revealed that cross-coupling effects and feedback loops in unhardened dividers cause significant logic upsets.
• The proposed hardening method, incorporating redundancy, effectively mitigated SEE impacts.
• Radiation tolerance of the frequency divider circuit showed notable improvement after hardening.

Conclusions:

• The developed transient current model accurately predicts SEEs in InP HBT-based frequency dividers.
• Unhardened circuits are vulnerable to logic upsets due to internal feedback mechanisms triggered by SEEs.
• The proposed redundant hardening strategy is effective in enhancing the radiation tolerance of frequency dividers.