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Lowering the Schottky Barrier Height by Quasi-van der Waals Contacts for High-Performance p-Type MoTe2 Field-Effect
Ze Yang1, Xingkun Peng1, Jinyong Wang2
1Department of Microelectronics and Integrated Circuit, School of Electronic Science and Engineering (National Model Microelectronics College), Xiamen University, Xiamen 361005, China.
ACS Applied Materials & Interfaces
|April 27, 2024
Summary
We developed high-performance p-type molybdenum ditelluride (MoTe2) transistors using a novel van der Waals transfer process. This method significantly reduces contact resistance for 2D electronics.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Two-dimensional (2D) transition-metal dichalcogenides (TMDs) show promise for next-generation electronics.
- High contact resistance at metal-TMD interfaces, particularly for p-type TMDs, hinders device performance.
Purpose of the Study:
- To address the challenge of high contact resistance in p-type TMDs.
- To demonstrate high-performance p-type MoTe2 field-effect transistors (FETs) with low contact resistance.
Main Methods:
- Utilized a nondestructive van der Waals (vdW) transfer process.
- Integrated platinum ditelluride (PtTe2) as a semimetal contact for MoTe2 FETs.
- Characterized interface properties using transmission electron microscopy (TEM).
Main Results:
- Achieved significantly improved electrical characteristics in MoTe2 FETs with PtTe2 contacts.
- Observed a mobility increase to 80 cm^2 V^-1 s^-1 and an on-state current rise to 5.0 μA/μm.
- Reduced the Schottky barrier height (SBH) to 48 meV, indicating efficient carrier injection.
Conclusions:
- PtTe2 semimetal contacts enable low contact resistance in MoTe2 FETs via quasi-vdW interfaces.
- The interface engineering strategy offers a facile method for creating low-resistance vdW contacts.
- This approach opens opportunities for 2D materials in advanced optoelectronics and electronics.
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