Continuous Tunable Energy Band Tailoring Boosts Extending the Sensing of the Waveband Based on (InGa_1-)₂O₃...

Rising wide bandgap semiconductor gallium oxide (Ga₂O₃) displays huge potential in performing solar-blind photodetection, with constraint in narrow detection wavebands in nature, whereas bandgap modulation through the introduction of exotic atoms into Ga₂O₃ has an essential effect on the tunable performance of photodetectors and the detection waveband. Here, a novel method for the preparation of (InGa_1-)₂O₃ alloy films is proposed, and the continuous tuning of the bandgap in the range of 3.70-4.99 eV is achieved by varying the In-doping content. Alloy-based metal-semiconductor-metal photodetectors were fabricated, achieving a peak responsivity between 254 and 295 nm, superior performance compared to Ga₂O₃ photodetectors, with a photo-to-dark current ratio as high as 10⁶, and a better optical image-sensing capability. This study offers new insight for high-performance detection of full solar-blind waveband ultraviolet light.