Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

399
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
399
Biasing of FET01:22

Biasing of FET

267
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
267
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

741
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
741
MOSFET01:16

MOSFET

467
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
467
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

328
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
328
Characteristics of MOSFET01:17

Characteristics of MOSFET

372
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
372

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Probing picometre-scale interlayer deformations via hyperbolic polaritons.

Nature·2026
Same author

Rapid sintering of ultrafine-grained refractory metals under mild conditions.

Nature materials·2026
Same author

The Role of Sulfur in Single-Walled Carbon Nanotube Growth.

ACS nano·2026
Same author

Monolithic Integration of Crack-Free 2D Bi<sub>2</sub>O<sub>2</sub>Se via Stress Modulation.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Gate-Tunable Correlated Electronic State in Atomically Thin Single-Crystal VO<sub>2-δ</sub>.

ACS nano·2026
Same author

Author Correction: Cyclododecane-based high-intactness and clean transfer method for fabricating suspended two-dimensional materials.

Nature communications·2026

Related Experiment Video

Updated: Jun 27, 2025

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.0K

Integrated 2D multi-fin field-effect transistors.

Mengshi Yu1, Congwei Tan1, Yuling Yin2,3

  • 1Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.

Nature Communications
|April 29, 2024
PubMed
Summary
This summary is machine-generated.

Researchers developed a new method for creating high-density, aligned two-dimensional (2D) semiconductor fins. This breakthrough enables the fabrication of advanced multi-fin transistors for enhanced electronic device performance and integration.

More Related Videos

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
09:59

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

7.8K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.6K

Related Experiment Videos

Last Updated: Jun 27, 2025

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.0K
Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
09:59

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

7.8K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.6K

Area of Science:

  • Materials Science
  • Nanotechnology
  • Semiconductor Physics

Background:

  • Vertical semiconducting fins with high-κ dielectrics are crucial for advanced transistor scaling.
  • Two-dimensional (2D) single-fin channels offer advantages for sub-nanometer fin widths and atomically flat interfaces.
  • Achieving higher electrical performance and integration density often requires multi-fin structures.

Purpose of the Study:

  • To develop a strategy for fabricating integrated 2D multi-fin field-effect transistors.
  • To explore the potential of 2D materials for ultrascaled electronics.
  • To improve device performance and integration density in next-generation transistors.

Main Methods:

  • A ledge-guided epitaxy strategy was employed to grow high-density, mono-oriented 2D Bi2O2Se fin arrays.
  • Aligned substrate steps were utilized for precise control over nucleation sites and orientation.
  • Fabrication of multi-channel 2D fin field-effect transistors using epitaxially integrated 2D Bi2O2Se/Bi2SeO5 fin-oxide heterostructures.

Main Results:

  • High-density, mono-oriented 2D Bi2O2Se fin arrays were successfully grown.
  • Fabricated 2D multi-fin transistors demonstrated an on/off current ratio exceeding 10^6.
  • The devices exhibited high on-state current, low off-state current, and notable durability.

Conclusions:

  • The developed ledge-guided epitaxy strategy enables precise control over 2D fin array growth.
  • Integrated 2D multi-fin channel arrays with high-κ oxide dielectrics offer a viable path for ultrascaled 2D electronics.
  • This approach significantly enhances device performance and integration density for future electronic applications.