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Updated: Jun 27, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Multiferroicity driven by single-atom adsorption on the two-dimensional semiconductor ScCl3
Yu Liang1, Huasheng Sun1, Xiang Li1
1College of Information Science and Technology, Nanjing Forestry University, Nanjing, Jiangsu 210037, P. R. China. fangwu@njfu.edu.cn.
Abstract:
In recent years, two-dimensional (2D) transition metal halides (such as CrI3) have received more and more attention for the practical applications of spintronic devices due to their unique electronic and magnetic properties. However, most 2D transition metal halides are centrosymmetric and are non-polar, which hinders their applications on nonvolatile memories. Here, on the basis of first-principles calculations, we predict that the adsorption of K single-atoms on the ScCl3 monolayer (denoted as K@ScCl3) could break the structural centrosymmetry and induce a reversible large out-of-plane electric polarization. Simultaneously, the adsorption of K single-atoms induces a magnetic moment localized on Sc ions, which forms a ferromagnetic order with an estimated Curie temperature of ∼37 K. These make the K@ScCl3 monolayer a ferromagnetic ferroelectric semiconductor. These findings propose a new route to realize 2D multiferroic materials, which is of great significance for the research and development of spintronics.
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