Simultaneous Defect Passivation and Electric Level Regulation with Rubidium Fluoride for High-Efficiency CsPbI₂Br...

Due to the good balance of efficiency and stability, CsPbI₂Br perovskite solar cells (PSCs) recently have attracted widespread attention. However, the improvement in photovoltaic performance for CsPbI₂Br PSCs was mainly limited by massive defects and unmatched energy levels. Surface modification is the most convenient and effective strategy to decrease defect densities of perovskite films. Herein, we deposited rubidium fluoride (RbF) onto the surface of CsPbI₂Br perovskite films by spin-coating. The numerous defects could be significantly passivated by RbF, resulting in suppressed nonradiative recombination. Furthermore, the CsPbI₂Br perovskite film after RbF treatment exhibits a deeper Fermi level, and an additional built-in electric field forms to promote charge transport. Consequently, the champion device achieves a high efficiency of 10.82% with an improved V_OC of 1.14 V, and it also exhibits excellent stability after long-term storage. This work offers a simple and effective approach to enhance the photovoltaic performance and stability of PSCs for broader applications in the future.