Improved power and temperature performance of half-disk diode microlasers.

Area of Science:

• Semiconductor Lasers
• Optoelectronics
• Quantum Dot Technology

Background:

• Half-disk microlasers with InGaAs/GaAs quantum dots are key optoelectronic components.
• Understanding their thermal and power characteristics is crucial for device optimization.

Purpose of the Study:

• To investigate the power and temperature performance of Ø200 µm half-disk microlasers.
• To analyze device behavior under continuous wave (CW) and pulsed operating conditions.
• To determine the dependence of microlaser temperature on CW pumping current.

Main Methods:

• Characterization of power and temperature in CW and pulsed modes.
• Analysis of current-voltage (IV) characteristics for both CW and pulsed regimes.
• Determination of microlaser temperature at specific CW current points.

Main Results:

• Maximal CW optical power reached 134 mW at 20°C, with CW lasing up to 113°C.
• Pulsed regime achieved 1.6 W optical power, limited by catastrophic degradation.
• Microlaser temperatures were 60°C, 99°C, and 149°C at maximal wall-plug efficiency, maximal optical power, and lasing quenching, respectively.

Conclusions:

• The study provides critical data on the operational limits and thermal behavior of these quantum dot microlasers.
• Understanding temperature dependence is vital for designing high-performance, reliable optoelectronic devices.
• Results inform strategies for managing thermal effects to enhance device efficiency and longevity.