High responsivity photodetector based on MEH-PPV/CsPbBr₃heterojunction.

Area of Science:

• Optoelectronics
• Materials Science
• Nanotechnology

Background:

• Perovskite quantum dots (QDs) and organic materials show promise for optoelectronic devices.
• MEH-PPV is an organic semiconductor with potential applications in photodetection.

Purpose of the Study:

• To fabricate and characterize MEH-PPV/CsPbBr3 heterojunction photodetectors (PDs).
• To investigate the role of CsPbBr3 QDs in improving PD performance by passivating defects and enhancing charge transfer.

Main Methods:

• MEH-PPV/CsPbBr3 heterojunction PDs were fabricated using the spin coating method.
• The photoelectric properties of the fabricated devices were evaluated under 532 nm laser irradiation.

Main Results:

• The MEH-PPV/CsPbBr3 heterojunction exhibited improved energy level alignment and effective charge separation.
• The PD achieved a high responsivity (R) of 11.98 A W⁻¹, specific detectivity (D*) of 6.98 × 10¹¹ Jones, and a fast response time of 15/16 ms.
• Dark current was significantly inhibited, leading to improved overall photoelectric performance.

Conclusions:

• The MEH-PPV/CsPbBr3 heterojunction effectively passivates surface defects and enhances charge transfer in PDs.
• This work demonstrates the potential of combining perovskite QDs and organic materials for high-performance photodetector applications.
• The findings provide valuable insights for future research in heterojunction optoelectronic devices.