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Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
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Universal scaling law for chiral antiferromagnetism
Shijie Xu1,2,3,4,5, Bingqian Dai2, Yuhao Jiang1,3
1National Key Laboratory of Spintronics, Hangzhou International Innovation Institute, Beihang University, 311115, Hangzhou, China.
Nature Communications
|May 2, 2024
Summary
Chiral antiferromagnetic materials like Mn3Pt exhibit two anomalous Hall effect contributions. A universal scaling law explains these contributions, crucial for advancing antiferromagnetic spintronics.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Chiral antiferromagnetic (AFM) materials are extensively studied for their unique physics, including Berry phase and topology.
- These materials offer a promising foundation for the emerging field of antiferromagnetic spintronics.
Purpose of the Study:
- To investigate the anomalous Hall effect (AHE) in chiral AFM Mn3Pt.
- To propose a universal scaling law for AHE resistivity in chiral magnets.
- To explore the modulation of AHE contributions by interfacial electron scattering.
Main Methods:
- Experimental investigation of AHE in Mn3Pt.
- Theoretical modeling to establish a universal AHE scaling law.
- Analysis of the relationship between AHE components and film thickness.
Main Results:
- Identified two distinct AHE contributions in Mn3Pt: intrinsic (time-reversal symmetry breaking) and topological (skew scattering due to out-of-plane spin canting).
- Proposed a universal AHE scaling law incorporating scalar spin chirality (SSC)-induced skew scattering and non-collinear spin-texture induced intrinsic AHE terms.
- Demonstrated that these AHE contributions are modulated by interfacial electron scattering, showing a linear dependence on inverse film thickness.
Conclusions:
- The proposed scaling law effectively explains AHE in Mn3Pt and is applicable to other chiral magnets.
- Interfacial electron scattering plays a key role in modulating AHE contributions.
- Findings have significant implications for the development of chiral-based spintronics devices.
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