Synthesis, Characterization, and Resistive Memory Behaviors of Highly Strained Cyclometalated Platinum(II) Nanohoops

Youzhi Xu ¹, Ming-Yi Leung ¹, Liangliang Yan ¹

⁰Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong 999077, P. R. China.

Journal of the American Chemical Society +

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May 3, 2024

View abstract on PubMed

Summary

Researchers synthesized novel platinum(II) nanohoops, demonstrating strain-enhanced reactivity and optoelectronic properties. These strained carbon nanohoops show promise for advanced resistive memory devices.

Area Of Science

Supramolecular Chemistry
Materials Science
Organic Electronics

Background

Strained carbon nanohoops possess unique π-conjugated structures with notable photophysical properties.
Incorporating nanohoops into metal complex pincer ligands remains an underexplored area.
Strain engineering is a key strategy for tuning molecular properties.

Purpose Of The Study

To synthesize and characterize a new family of highly strained cyclometalated platinum(II) nanohoops.
To investigate the impact of strain on the reactivity and electronic properties of these nanohoops.
To explore their application in solution-processable resistive memory devices.

Main Methods

Synthesis of cyclometalated platinum(II) nanohoops.
Characterization using spectroscopic techniques (e.g., transient absorption spectroscopy).
Fabrication and testing of resistive memory devices.

Main Results

Successful synthesis and characterization of strained platinum(II) nanohoops.
Observation of strain-promoted C-H bond activation during metal coordination.
Demonstration of size-dependent excited state properties and Hückel-Möbius topology.
Application in solution-processable resistive memory devices with low switching voltages and high stability.

Conclusions

Strain incorporation is an effective strategy to tune nanohoop reactivity and optoelectronic properties.
Platinum(II) nanohoops are promising active materials for resistive memory applications.
The smallest platinum(II) nanohoop enabled binary memory fabrication with excellent performance.