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Sidewall angle tuning in focused electron beam-induced processing.

Sangeetha Hari1,2, Willem F van Dorp1,3, Johannes J L Mulders4

  • 1Department of Imaging Physics, Delft University of Technology, Lorentzweg 1, 2628CJ Delft, Netherlands.

Beilstein Journal of Nanotechnology
|May 7, 2024
PubMed
Summary
This summary is machine-generated.

Focused electron beam-induced deposition (FEBID) structures now have vertical sidewalls using a novel FEBID and etching technique. This method allows precise control over sidewall angles, overcoming limitations of traditional FEBID fabrication.

Keywords:
FEBIDFEBIEFEBIPelectron lithographyside wall angle

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Surface Science

Background:

  • Focused electron beam-induced deposition (FEBID) commonly results in structures with sloped sidewalls.
  • Sloped sidewalls are problematic for applications requiring precise 3D nano-architectures, particularly in interconnected systems.

Purpose of the Study:

  • To develop and demonstrate a novel technique for fabricating FEBID structures with vertical sidewalls.
  • To investigate the control of sidewall angles using a combined FEBID and focused electron beam-induced etching (FEBIE) approach.

Main Methods:

  • Utilizing a dual approach combining FEBID for deposition and FEBIE for etching.
  • Employing water as an etchant for carbon-based FEBID structures.
  • Analyzing etched structures using transmission electron microscopy (TEM) and in-situ scanning electron microscopy (SEM).

Main Results:

  • Achieved tunable sidewall angles, ranging from outward to inward, by controlling the electron beam's etch position.
  • Observed unexpected under-etching attributed to secondary electron emission from the deposit and substrate.
  • Developed an analytical model to explain the observed under-etching phenomenon.

Conclusions:

  • The combined FEBID and FEBIE technique offers precise control over sidewall geometry in nanostructures.
  • Secondary electron emission plays a critical role in the etching process, leading to complex sidewall profiles.
  • This method enables the fabrication of high-aspect-ratio nanostructures essential for advanced applications.